One of the pressing problems of modern semiconductor technology is the overheating of electronic components. Transistors are heated in the process of internal load current, and from external heat sources. When heated to a certain critical temperature thermal breakdown can occur, which is accompanied by destruction of the structure of matter and is an irreversible process. To avoid overheating of semiconductors have to use heat sinks, fans, water blocks and other cooling systems. Fujitsu has created
transistors that do not require cooling even in continuous operation at very high (for semiconductors) temperatures. Fujitsu Laboratories engineers have developed technology to create such high electron mobility transistor (HEMT, high electron-mobility transistors), which can operate at a temperature of 200 degrees Celsius channels and stock voltage of 50 V for more than a million hours, or about 100 years. It is noted that these transistors are conveniently used in devices that serve high-speed wireless communications (VSAT, WiMAX, cellular base stations, etc.), all of which require more power, better performance semiconductor components, and operate reliably in harsh temperature conditions.
new transistors are not built on silicon and gallium nitride based (GaN), while the substrate is used as silicon carbide (SiC). In a press release from Fujitsu says that GaN HEMT-transistors are the best in its class by the maximum operating voltage of the drain (50). The previous record reached the mark of 28, so that progress in the field of gallium nitride transistor-evident.
details of the new technology were presented at the event, IEEE MTT-S International Microwave Symposium 2007. Fujitsu promises to not rest on our laurels and continue to work in this promising direction.
Source
One of the pressing problems of modern semiconductor technology is the overheating of electronic components. Transistors are heated in the process of internal load current, and from external heat sources. When heated to a certain critical temperature thermal breakdown can occur, which is accompanied by destruction of the structure of matter and is an irreversible [...]
One of the pressing problems of modern semiconductor technology is the overheating of electronic components. Transistors are heated in the process of internal load current, and from external heat sources. When heated to a certain critical temperature thermal breakdown can occur, which is accompanied by destruction of the structure of matter and is an irreversible [...]
One of the pressing problems of modern semiconductor technology is the overheating of electronic components. Transistors are heated in the process of internal load current, and from external heat sources. When heated to a certain critical temperature thermal breakdown can occur, which is accompanied by destruction of the structure of matter and is an irreversible [...]
One of the pressing problems of modern semiconductor technology is the overheating of electronic components. Transistors are heated in the process of internal load current, and from external heat sources. When heated to a certain critical temperature thermal breakdown can occur, which is accompanied by destruction of the structure of matter and is an irreversible [...]
One of the pressing problems of modern semiconductor technology is the overheating of electronic components. Transistors are heated in the process of internal load current, and from external heat sources. When heated to a certain critical temperature thermal breakdown can occur, which is accompanied by destruction of the structure of matter and is an irreversible [...]
One of the pressing problems of modern semiconductor technology is the overheating of electronic components. Transistors are heated in the process of internal load current, and from external heat sources. When heated to a certain critical temperature thermal breakdown can occur, which is accompanied by destruction of the structure of matter and is an irreversible [...]
One of the pressing problems of modern semiconductor technology is the overheating of electronic components. Transistors are heated in the process of internal load current, and from external heat sources. When heated to a certain critical temperature thermal breakdown can occur, which is accompanied by destruction of the structure of matter and is an irreversible [...]
